Doping of GaAs in metalorganic MBE using gaseous sources
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 270-275
- https://doi.org/10.1016/0022-0248(87)90403-9
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Defects in GaAs films grown by MOMBEJournal of Crystal Growth, 1987
- A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAsJournal of Crystal Growth, 1986
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium SourceJapanese Journal of Applied Physics, 1986
- Be Doping Effect on Growth Kinetics of GaAs Grown by MBEJapanese Journal of Applied Physics, 1986
- A Study of Silicon Incorporation in GaAs MOCVD LayersJournal of the Electrochemical Society, 1985
- GaAs growth in metal–organic MBEJournal of Vacuum Science & Technology B, 1985
- SiH4 doping of MBE GaAs and AlxGa1−xAsJournal of Vacuum Science & Technology B, 1985
- Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor depositionJournal of Crystal Growth, 1984
- Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs SuperlatticePhysical Review Letters, 1981
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979