Interaction effects in the weakly localized regime and the anomalous conductivity of Sb-doped Ge at low temperature
- 28 February 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (1-2) , 163-169
- https://doi.org/10.1016/0038-1101(85)90226-6
Abstract
No abstract availableKeywords
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