Absorption and luminescence in GaP:Ni
- 1 February 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (3) , L133-L136
- https://doi.org/10.1088/0022-3719/12/3/010
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Nickel, a persistent inadvertent contaminant in device-grade vapour epitaxially grown gallium phosphideJournal of Physics D: Applied Physics, 1977
- Second-Order Raman Spectra and Phonon Dispersion in GaPCanadian Journal of Physics, 1973
- Characteristic infrared luminescence in GaP due to MnJournal of Luminescence, 1972
- Absorption Spectrum of Nickel in Gallium PhosphidePhysical Review B, 1968
- The Raman spectrum of gallium phosphideJournal de Physique, 1965