Nickel, a persistent inadvertent contaminant in device-grade vapour epitaxially grown gallium phosphide
- 21 December 1977
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 10 (18) , 2545-2554
- https://doi.org/10.1088/0022-3727/10/18/020
Abstract
The presence of Ni in vapour-phase epitaxy (VPE) GaP has been detected through the strong photoluminescence band it induces in the infrared, centred near 2 mu m. The band remains intense up to Ga(d8). This luminescence is a persistent feature of undoped VPE GaP and may be present up to 30% of the strength observed in Ni-diffused material.Keywords
This publication has 12 references indexed in Scilit:
- The complex form of donor energy levels in gallium phosphideJournal of Physics C: Solid State Physics, 1977
- Effect of III/V Ratio on the Properties of Vapor Phase Epitaxial GaPJournal of the Electrochemical Society, 1976
- Deep-level controlled lifetime and luminescence efficiency in GaPApplied Physics Letters, 1975
- Unified model of the temperature quenching of narrow-line and broad-band emissionsJournal of Luminescence, 1975
- Isoelectronic traps in semiconductors (experimental)Journal of Luminescence, 1973
- Electron-Capture ("Internal") Luminescence from the Oxygen Donor in Gallium PhosphidePhysical Review B, 1968
- Absorption Spectrum of Nickel in Gallium PhosphidePhysical Review B, 1968
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- Isoelectronic Donors and AcceptorsPhysical Review Letters, 1966
- The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport MechanismJournal of the Electrochemical Society, 1964