Relaxation-induced polarized luminescence fromInxGa1−xAs films grown on GaAs(001)

We have investigated local variations in the optical properties of ${\mathrm{In}}_{0.06}$ ${\mathrm{Ga}}_{0.94}$As/GaAs using linearly polarized cathodoluminescence imaging and spectroscopy. The influence of substrate misorientation on the polarization anisotropy of excitonic luminescence in the ${\mathrm{In}}_{0.06}$ ${\mathrm{Ga}}_{0.94}$As films was examined. Local variations in excitonic polarization anisotropy and emission energy are found to correlate spatially with dark line defects which result from the formation of interfacial misfit dislocations.