Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells
- 23 October 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (17) , 1765-1767
- https://doi.org/10.1063/1.102212
Abstract
The structural properties of pseudomorphic In0.23Ga0.77As/GaAs single quantum wells are investigated with x‐ray double‐crystal diffractometry. Anisotropic tilting of lattice planes along dislocations and anisotropic reflectivity of fully relaxed domains coexisting with strained domains are reported for the first time. Due to the anisotropic strain relaxation the crystal symmetry changes from tetragonal in the fully strained case to monoclinic in a partially relaxed quantum well.Keywords
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