Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy
- 11 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (2) , 113-115
- https://doi.org/10.1063/1.100385
Abstract
Variation in the magnitude and sign of the strain in GaAs/InGaAs/GaAs single quantum wells are studied as a function of layer thickness using photoluminescence spectroscopy. It is found that as the compressively strained ternary layer relaxes with increasing thickness, a tensile strain is introduced in the GaAs capping layer. This reduces the GaAs band gap and lifts the degeneracy of the valence band, which becomes light hole in character.Keywords
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