Photoluminescence in strained InGaAs-GaAs heterostructures
- 1 November 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (9) , 3898-3901
- https://doi.org/10.1063/1.339236
Abstract
Photoluminescence in strained InxGa1−xAs-GaAs single heterostructures, grown by molecular-beam epitaxy, is studied, and the critical layer thickness is determined for a range of In mole fractions. The critical thicknesses are compared with similar values measured on the same layers by double-crystal x-ray diffraction. Both techniques give essentially the same results. The photoluminescence line shapes are discussed for layer thicknesses below and above the critical thickness.This publication has 10 references indexed in Scilit:
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