Short-range order in III-V ternary alloy semiconductors
- 1 December 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (11) , 3850-3855
- https://doi.org/10.1063/1.337555
Abstract
Atom arrangements in III-V ternary alloy semiconductors are discussed using a thermodynamic analysis in which the elastic strain caused by mixing is considered as the mixing enthalpy. In calculating the strain energy, both bond-stretching and bond-angle distortion are taken into account, and Martin’s microscopic elastic constants are used. The results show that there is a preference for ordering but not for clustering in III-V ternary alloy semiconductors. Values of short-range order parameters which represent the degree of ordering are obtained for several alloy semiconductors.This publication has 17 references indexed in Scilit:
- Free Energies and Equilibrium States of Mono- and Bi-Layer Superstructures of III-V Ternary Alloy SemiconductorsJapanese Journal of Applied Physics, 1986
- Atomic structure model for Ga1−xInxAs solid solutionJournal of Applied Physics, 1985
- The Atomic‐Scale Origin of the Strain Enthalpy of Mixing in Zincblende AlloysJournal of the Electrochemical Society, 1985
- (InAs)1(GaAs)1 Layered Crystal Grown by MOCVDJapanese Journal of Applied Physics, 1984
- Alloy broadening in photoluminescence spectra ofPhysical Review B, 1984
- Mixing enthalpy and composition fluctuations in ternary III–V semiconductor alloysJournal of Physics and Chemistry of Solids, 1984
- Clustering in ternary III–V semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Theory of ternary III–V semiconductor phase diagramsPhysica B+C, 1981
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970
- Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-SbJournal of Physics and Chemistry of Solids, 1969