Atomic structure model for Ga1−xInxAs solid solution
- 15 June 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (12) , 5188-5191
- https://doi.org/10.1063/1.335254
Abstract
A simple atomic structure model was proposed for Ga1−xInxAs solid solution. Distortion energy caused by the differences in Ga‐As and In‐As bond lengths was calculated using the valence‐force‐field approach. Calculated bond lengths for Ga1−xInxAs agree well with the extended x‐ray absorption fine structure data. The calculated mixing enthalpy which corresponds to the excess energy caused by distortions agree with that from phase diagram.This publication has 8 references indexed in Scilit:
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