Photoluminescence of InxGa1-xAs-GaAs strained-layer superlattices
- 1 March 1985
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 14 (2) , 187-202
- https://doi.org/10.1007/bf02656675
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Properties of InxGa1−xAs-GaAs strained-layer quantum-well-heterostructure injection lasersJournal of Applied Physics, 1985
- Growth conditions and characterization of InGaAs/GaAs strained layers superlatticesJournal of Applied Physics, 1984
- Strained-layer quantum-well injection laserApplied Physics Letters, 1984
- Effects of strain and layer thickness on the growth of InxGa1−xAs–GaAs strained-layer superlatticesJournal of Vacuum Science & Technology B, 1984
- Stimulated emission in strained-layer quantum-well heterostructuresJournal of Applied Physics, 1983
- Optical studies of InxGa1−xAs-GaAs strained multiquantum well structuresApplied Physics Letters, 1983
- Continuous 300-K laser operation of strained superlatticesApplied Physics Letters, 1983
- Strained-layer superlattices from lattice mismatched materialsJournal of Applied Physics, 1982