Optical studies of InxGa1−xAs-GaAs strained multiquantum well structures
- 15 September 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (6) , 560-562
- https://doi.org/10.1063/1.94419
Abstract
We present photoluminescence and absorption measurements on molecular beam epitaxy grown strained InxGa1−xAs‐GaAs multiquantum well structures. The absorption results are interpreted as excitonic transitions (n=1, n=2), while the room‐temperature luminescence spectrum shows the corresponding subband to subband transitions, and the low‐temperature luminescence spectrum exhibits only the n=1 excitonic line.Keywords
This publication has 8 references indexed in Scilit:
- A GaAsxP1−x/GaP strained-layer superlatticeApplied Physics Letters, 1982
- Electronic structure of GaAsxP1−x/GaP strained-layer superlattices with x<0.5Journal of Vacuum Science and Technology, 1982
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977
- Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAsPhysical Review B, 1977
- Growth of GaP single crystals by the synthesis, solute diffusion methodJournal of Crystal Growth, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Crystal Interfaces. Part I. Semi-Infinite CrystalsJournal of Applied Physics, 1963
- One-dimensional dislocations. II. Misfitting monolayers and oriented overgrowthProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949