Dimerization induced incorporation nonlinearities in GaAsP
- 2 May 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (18) , 2418-2420
- https://doi.org/10.1063/1.111586
Abstract
We find that the incorporation of As and P into GaAs1−yPy, when using gas‐source molecular beam epitaxy, does not depend linearly upon the atomic fluxes within the reactor. Rather, incorporation of As and P into GaAsP goes as the square of the atomic fluxes, i.e., y=fP2/(fP2+βfAs2), where fP(As) is the flux of P(As). β is a fitting parameter and that differs for relaxed and strained GaAsP. The deviation in y from a linear model [y=fP/(fP+fAs)] is as high as a factor of two, whereas our quadratic model is never more than a few percent off. We interpret this as due to surface pairing between two like species (dimerization) in order for them to incorporate into the crystal.Keywords
This publication has 8 references indexed in Scilit:
- Growth of pseudomorphic InxGa1-xAs⧸GaPyAs1-y multiple quantum well structures on GaAs by gas source molecular beam epitaxyJournal of Crystal Growth, 1993
- Pseudomorphic InGaAs-GaAsP quantum well modulators on GaAsApplied Physics Letters, 1992
- Composition control of GaAsP grown by molecular beam epitaxyJournal of Crystal Growth, 1991
- First-principles study of the atomic reconstructions and energies of Ga- and As-stabilized GaAs(100) surfacesPhysical Review B, 1988
- Use of tertiarybutylphosphine for the growth of InP and GaAs1-xPxJournal of Electronic Materials, 1988
- Composition and lattice-mismatch measurement of thin semiconductor layers by x-ray diffractionJournal of Applied Physics, 1987
- Emergence of a periodic mode in the so-called turbulent region in a circular Couette flowJournal de Physique Lettres, 1982
- Composition effects in the growth of Ga(In)AsyP1-y alloys by MBEJournal of Crystal Growth, 1980