Growth of pseudomorphic InxGa1-xAs⧸GaPyAs1-y multiple quantum well structures on GaAs by gas source molecular beam epitaxy
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 184-188
- https://doi.org/10.1016/0022-0248(93)90601-r
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Growth of Ga1−xInxAs/GaAs1−yPy multiple quantum well structures by gas source molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Pseudomorphic InGaAs-GaAsP quantum well modulators on GaAsApplied Physics Letters, 1992
- Growth of highly strained InGaAs on GaAsApplied Physics Letters, 1988
- Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regimeApplied Physics Letters, 1988