HgTe/CdTe heterojunctions: A lattice-matched Schottky barrier structure
- 1 April 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4) , 3121-3128
- https://doi.org/10.1063/1.331008
Abstract
HgTe-CdTe lattice-matched heterojunctions were formed by the epitaxial growth of HgTe on CdTe substrates using a low-temperature metal organic chemical vapor deposition technique. These heterojunctions combine features of the Schottky barrier structure, due to the high carrier concentrations found in the semimetallic HgTe, with the structural perfection present in a lattice-matched heterojunction. The measured Schottky barrier height varied from 0.65 to 0.92 eV depending on the details of the heterojunction growth procedure used. This dependence may be due to the formation of an inversion layer in the CdTe at the interface. Presence of such an inversion layer suggests that the valence band discontinuity between HgTe and CdTe is small, in agreement with previous theoretical estimates.This publication has 18 references indexed in Scilit:
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