A Statistical Technique to Measure the Proportion of MBU's in SEE Testing
- 19 December 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 53 (6) , 3139-3144
- https://doi.org/10.1109/tns.2006.883907
Abstract
Neutron SEE data for memories shows that the distribution of MBU's is a geometrical progression. We demonstrate that this permits the proportion of MBU's to be calculated from the mean and variance of the errors per read-cycleKeywords
This publication has 12 references indexed in Scilit:
- Investigation of multi-bit upsets in a 150 nm technology SRAM deviceIEEE Transactions on Nuclear Science, 2005
- Angular dependence of multiple-bit upsets induced by protons in a 16 mbit DRAMIEEE Transactions on Nuclear Science, 2004
- Analyses of CCD images of nucleon-silicon interaction eventsIEEE Transactions on Nuclear Science, 2004
- Single particle dark current spikes induced in CCDs by high energy neutronsIEEE Transactions on Nuclear Science, 2003
- Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure: scaling effects on SEU and MBU cross sectionsIEEE Transactions on Nuclear Science, 2001
- In-flight observations of multiple-bit upset in DRAMsIEEE Transactions on Nuclear Science, 2000
- Analysis of single-ion multiple-bit upset in high-density DRAMsIEEE Transactions on Nuclear Science, 2000
- Neutron induced single-word multiple-bit upset in SRAMIEEE Transactions on Nuclear Science, 1999
- Analysis of multiple bit upsets (MBU) in CMOS SRAMIEEE Transactions on Nuclear Science, 1996
- Experimental and analytical investigation of single event, multiple bit upsets in poly-silicon load, 64 K*1 NMOS SRAMsIEEE Transactions on Nuclear Science, 1988