Investigation of multi-bit upsets in a 150 nm technology SRAM device
Top Cited Papers
- 1 December 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 52 (6) , 2433-2437
- https://doi.org/10.1109/tns.2005.860675
Abstract
Multi-bit upset (MBU) events collected from accelerated soft error rate (SER) measurements performed with a quasi-monoenergetic neutron beam were analyzed with a threefold purpose. The first goal was to qualitatively assess the applicability and effectiveness of single-bit Error Detection And Correction algorithms and circuits (EDAC). The second goal was to investigate the relationship with the memory core P-well tapping scheme. And the third goal was to identify "preferred" MBU shapes. The results showed that the memory architecture is critical in affecting the single-bit EDAC effectiveness. Also, it was put in evidence that the tapping scheme is very effective in reducing the MBU rate. And finally it was noted that the predominant MBU shape is strongly influenced by the vertical and horizontal distance of the active nodes of the memory cells.Keywords
This publication has 11 references indexed in Scilit:
- Investigation of soft error rate including multi-bit upsets in advanced SRAM using neutron irradiation test and 3D mixed-mode device simulationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Comprehensive study of soft errors in advanced CMOS circuits with 90/130 nm technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Broadening of the variance of the number of upsets in a read-cycle by MBUsIEEE Transactions on Nuclear Science, 2004
- Angular dependence of multiple-bit upsets induced by protons in a 16 mbit DRAMIEEE Transactions on Nuclear Science, 2004
- Alpha-particle SEU performance of SRAM with triple wellIEEE Transactions on Nuclear Science, 2004
- Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure: scaling effects on SEU and MBU cross sectionsIEEE Transactions on Nuclear Science, 2001
- Investigation of single-ion multiple-bit upsets in memories on board a space experimentIEEE Transactions on Nuclear Science, 2000
- Neutron induced single-word multiple-bit upset in SRAMIEEE Transactions on Nuclear Science, 1999
- Analysis of multiple bit upsets (MBU) in CMOS SRAMIEEE Transactions on Nuclear Science, 1996
- Experimental and analytical investigation of single event, multiple bit upsets in poly-silicon load, 64 K*1 NMOS SRAMsIEEE Transactions on Nuclear Science, 1988