The kinetics of dislocation glide in SiGe alloy layers
- 1 October 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (10) , 1101-1106
- https://doi.org/10.1007/bf02651988
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- A quantitative analysis of strain relaxation by misfit dislocation glide in Si1−xGex/Si heterostructuresJournal of Applied Physics, 1990
- Heterojunction bipolar transistors using Si-Ge alloysIEEE Transactions on Electron Devices, 1989
- Direct-gap Si/Ge superlatticesPhysical Review B, 1989
- The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness valuesJournal of Crystal Growth, 1989
- Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1989
- Si/SiGe heterojunction bipolar transistor made by molecular-beam epitaxyIEEE Transactions on Electron Devices, 1989
- Investigation of dislocation mobilities in germanium in the low-temperature range byin situstraining experimentsPhilosophical Magazine A, 1988
- Yield point and dislocation mobility in silicon and germaniumJournal of Applied Physics, 1983
- Dislocations and Plastic Flow in the Diamond StructurePublished by Elsevier ,1969
- Velocities and Densities of Dislocations in Germanium and Other Semiconductor CrystalsJournal of Applied Physics, 1962