Twins and stacking faults in vapor grown GaAs
- 1 June 1967
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 28 (6) , 927-930
- https://doi.org/10.1016/0022-3697(67)90207-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- Stacking Fault Nucleation in Epitaxial Silicon on Variously Oriented Silicon SubstratesJournal of Applied Physics, 1964
- Electron microscopy and diffraction of twinned structures in evaporated films of goldPhilosophical Magazine, 1963
- Diffraction contrast from spherically symmetrical coherency strainsPhilosophical Magazine, 1963
- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963