Field-effect conductance of YBa2Cu3O6
- 15 April 1991
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (8) , 4439-4441
- https://doi.org/10.1063/1.348373
Abstract
Metal‐insulator‐semiconductor field effect transistors have been fabricated using laser ablation to deposit YBaCuO thin films onto SrTiO3, MgO, LaAlO3, and LaGaO3 substrates. The substrates were used as gate insulators. The conductivity of two films on SrTiO3 could be modulated, while for other samples the conductivity was independent of the gate voltage. The field‐effect mobility was extracted and found to be of magnitude comparable to the mobility of metallic YBa2Cu3O7.This publication has 10 references indexed in Scilit:
- Electric Field Effect on the Al-MgO-YBa2Cu3Oy StructureJapanese Journal of Applied Physics, 1990
- Localization and oxygen concentration in epitaxial YBa2Cu3Ox thin films on (100) SrTiO3 substrates deposited by laser ablationPhysica C: Superconductivity and its Applications, 1989
- Onset of superconductivity in ultrathin granular metal filmsPhysical Review B, 1989
- Conductivity and Hall coefficient innear the insulator-metal transitionPhysical Review B, 1989
- Epitaxial films of YBa2Cu3O7−δ on NdGaO3, LaGaO3, and SrTiO3 substrates deposited by laser ablationApplied Physics Letters, 1989
- Possible superconductivity on the junction surface of dielectric La2CuO4Physics Letters A, 1988
- Normal-state transport parameters of epitaxial thin films ofPhysical Review B, 1988
- Theory and interpretation of the field-effect conductance experiment in amorphous siliconJournal of Applied Physics, 1975
- Permittivity of Strontium TitanateJournal of Applied Physics, 1972
- Ambient induced changes of the conductance of amorphous germaniumMaterials Research Bulletin, 1970