Dislocation structure in InxGa1−xAs/GaAs strained-layer superlattices
- 1 September 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (5) , 1713-1716
- https://doi.org/10.1063/1.339598
Abstract
The dislocation structure in InGaAs/GaAs strained-layer superlattices has been characterized by transmission electron microscopy. It is shown that most of the dislocations are confined to the buffer/strained-layer superlattice interface. We have also found that the strained-layer interface can be an effective barrier to dislocation propagation. Extended dislocations, which are potentially electrically active defects, are shown to exist in the strained-layer superlattice.This publication has 6 references indexed in Scilit:
- Mechanism of misfit dislocation network formation in the heteroepitaxial system Ge-GaAs (001)Physica Status Solidi (a), 1985
- A new type of source generating misfit dislocationsApplied Physics B Laser and Optics, 1978
- Dislocations in vapor-grown compositionally graded (In,Ga)PJournal of Applied Physics, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- Electron Microscopic Study of the Structure Defects and Their Interactions in NiobiumditelluridePhysica Status Solidi (b), 1970