Dislocations in vapor-grown compositionally graded (In,Ga)P
- 1 October 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (10) , 4259-4270
- https://doi.org/10.1063/1.321409
Abstract
Dislocation morphologies in compositionally graded vapor‐phase epitaxial (VPE) layers of (In,Ga)P deposited on (100) GaP substrates have been determined via transmission electron microscopy using (011) cross‐sectional samples. Evidence for the introduction of misfit dislocations by slip and from substrate dislocations has been found. These processes lead to the familiar crossed array of dislocations at an interfacial misfit plane. Evidence for Frank‐Read sources, which are pinned dislocation segments in the crossed array, and dislocation annihilation is also presented. Asymmetric arrays of dislocations at compositional steps have been observed.This publication has 13 references indexed in Scilit:
- Reduction of dislocation densities in heteroepitaxial III−V VPE semiconductorsJournal of Applied Physics, 1975
- Cross-sectional specimens for transmission electron microscopyJournal of Applied Physics, 1974
- Asymmetric Cracking in III–V CompoundsJournal of the Electrochemical Society, 1974
- Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction ElectroluminescenceJournal of the Electrochemical Society, 1973
- Like-sign asymmetric dislocations in zinc-blende structureApplied Physics Letters, 1972
- Equilibrium Structure of a Thin Epitaxial FilmJournal of Applied Physics, 1970
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969
- Improvements to the ALBA Machine for Thinning Specimens for Electron MicroscopyReview of Scientific Instruments, 1968
- Accommodation of misfit across the interface between single-crystal films of various face-centred cubic metalsPhilosophical Magazine, 1966
- One-dimensional dislocations. II. Misfitting monolayers and oriented overgrowthProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949