Generation-recombination noise of hot carriers in semiconductors
- 30 April 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3-4) , 543-546
- https://doi.org/10.1016/0038-1101(88)90337-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Diffusion coefficient of holes in silicon by Monte Carlo simulationJournal of Applied Physics, 1986
- The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materialsReviews of Modern Physics, 1983
- One model of flicker, burst, and generation-recombination noisesPhysical Review B, 1981