Diffusion coefficient of holes in silicon by Monte Carlo simulation
- 15 February 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (4) , 1212-1215
- https://doi.org/10.1063/1.336507
Abstract
A theoretical investigation of the diffusivity of holes in Si as a function of temperature, field strength, and field direction is reported. Calculations have been performed with the Monte Carlo procedure. The theoretical analysis explains the main features exhibited by the experimental data available from the literature. Minor discrepancies between theory and experiment are discussed in terms of microscopic mechanisms and/or reliability of the different experimental techniques used.This publication has 16 references indexed in Scilit:
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