Thermal Noise, Diffusion, and the Mobility of Hot Holes in Silicon

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Abstract
The longitudinal diffusion coefficient and the mobility of holes in silicon are calculated as a function of electric field strength from noise and conduction measurements on p+ πp+ planar silicon devices at T = 100, 145, and 210 K. The electric field is oriented along the 〈100〉 direction. The results obtained for the longitudinal diffusion coefficient at T = 100 and 145 K show that both light and heavy holes contribute to charge transport. The values found for the mobility agree very well with those which Ottaviani et al. obtained using the time‐of‐flight technique.