Temperature-dependence of the combined effective mass of holes in silicon
- 1 February 1970
- journal article
- Published by Springer Nature in Lettere al Nuovo Cimento (1971-1985)
- Vol. 3 (8) , 239-245
- https://doi.org/10.1007/bf02755754
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Low-Field Mobility and Galvanomagnetic Properties of Holes in Germanium with Phonon ScatteringPhysical Review B, 1968
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- Polarization Dependence of the Indirect Piezoabsorption Coefficient in Ge and SiPhysical Review Letters, 1966
- On the interpretation of the observed hole mass shift with Uniaxial stress in siliconPhysics Letters, 1965
- Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation PotentialsPhysical Review B, 1963
- Theory of Cyclotron Resonance in Strained Silicon CrystalsPhysical Review B, 1963
- Internal Impurity Levels in Semiconductors: Experiments in-Type SiliconPhysical Review Letters, 1960
- Scattering of Electrons by Lattice Vibrations in Nonpolar CrystalsPhysical Review B, 1956
- Energy band structure in p-type germanium and siliconJournal of Physics and Chemistry of Solids, 1956
- Statistics and Galvanomagnetic Effects in Germanium and Silicon with Warped Energy SurfacesPhysical Review B, 1955