Internal Impurity Levels in Semiconductors: Experiments in-Type Silicon
- 15 February 1960
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 4 (4) , 173-176
- https://doi.org/10.1103/physrevlett.4.173
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.4.173Keywords
This publication has 8 references indexed in Scilit:
- Exciton and Magneto-Absorption of the Direct and Indirect Transitions in GermaniumPhysical Review B, 1959
- Intervalence band transitions in gallium arsenideJournal of Physics and Chemistry of Solids, 1959
- Dielectric constant of germanium and silicon as a function of volumeJournal of Physics and Chemistry of Solids, 1959
- Valence Band Structure of SiliconPhysical Review Letters, 1958
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958
- Infrared spectra of Group III acceptors in siliconJournal of Physics and Chemistry of Solids, 1958
- Cyclotron Resonance Experiments in Silicon and GermaniumPhysical Review B, 1956
- Energy band structure in p-type germanium and siliconJournal of Physics and Chemistry of Solids, 1956