Raman scattering from heavily doped (311) GaAs:Si grown by molecular beam epitaxy
- 1 July 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (1) , 285-286
- https://doi.org/10.1063/1.352131
Abstract
Raman scattering by localized vibrational modes and plasmons has been used to characterize heavily p‐ and n‐type silicon‐doped (311)A GaAs layers grown by molecular beam epitaxy. Consistent with the doping character, p‐type samples show two modes associated with Si(As) and the complex defect Si‐X. Acceptor‐related lines were not observed in n‐type samples, an indication that compensation levels in the layers are very low. The results are discussed in relation to growth conditions on (311)A surfacesThis publication has 9 references indexed in Scilit:
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