Statistics of Carrier Recombination at Disordered Regions in Semiconductors
- 1 June 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (7) , 3109-3113
- https://doi.org/10.1063/1.1656742
Abstract
In semiconductors, when a region of local disorder is produced (e.g., by neutron irradiation), the defects contained in the region affect the local equilibrium carrier densities and act as effective recombination centers. In this paper, expressions are given for the transient carrier lifetime at low excess carrier densities, and for the steady‐state lifetime at low defect concentrations. Results agree well with experimental observations of neutron‐irradiated silicon.This publication has 8 references indexed in Scilit:
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