Picosecond Reflectometry Technique for On-Chip Characterization of Millimeter-Wave Semiconductor Devices

Open Access

1 January 1987

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2 (0149645X) , 881-884
https://doi.org/10.1109/mwsym.1987.1132558

Abstract

A multi-sampler reflectometer technique k described for on-chip characterization of semiconductor devices at millimeter-wave frequencies. Focus is on enhancing measurement accuracy and frequency band coverage by augmenting photoconductive circuit elements, which perform signal generation and sampler functions, with pulse-shaping and impedance-matching networks. The approach is illustrated with a GaAs 150 GHz bandwidth example.

Keywords

REFLECTOMETRY
MILLIMETER WAVE TECHNOLOGY
SEMICONDUCTOR DEVICES
MILLIMETER WAVE CIRCUITS
MILLIMETER WAVE MEASUREMENTS
PULSE MEASUREMENTS
IMPEDANCE MEASUREMENT
FREQUENCY MEASUREMENT
PHOTOCONDUCTING DEVICES
PERFORMANCE EVALUATION

This publication has 1 reference indexed in Scilit:

On-Chip Picosecond Time-Domain Measurements for VLSI and Interconnect Testing Using Photoconductors
IEEE Journal of Solid-State Circuits, 1985