Orientation and pressure dependence of the band overlap in InAs/GaSb structures
- 1 January 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (1) , 118-122
- https://doi.org/10.1088/0268-1242/9/1/021
Abstract
The band overlap at the InAs-GaSb interface has been measured using electron and hole densities deduced from magnetotransport measurements, combined with self-consistent energy level calculations, for structures with both (001) and (111)A orientations. This band crossing is found to be 140 meV for the (001) orientation but increases to 200 meV for (111)A. The difference is attributed to the presence of an interface dipole for (111)A growth. In addition, the band overlap decreases, with applied hydrostatic pressure, at a higher rate for the (111)A orientation.Keywords
This publication has 18 references indexed in Scilit:
- Interface studies of InAs/GaSb superlattices by Raman scatteringSurface Science, 1992
- Optimization of the growth by MOVPE of strained GaSb/InAs double heterojunctions and superlattices on [111] GaAs substratesJournal of Crystal Growth, 1992
- Piezoelectric control of doping and band structure in the crossed gap system GaSb/InAsSurface Science, 1992
- Photoluminescence of GaSb grown by metal-organic vapour phase epitaxySemiconductor Science and Technology, 1991
- Band lineups and deformation potentials in the model-solid theoryPhysical Review B, 1989
- Observation of the zero-field spin splitting of the ground electron subband in gasb-inas-gasb quantum wellsPhysical Review B, 1988
- Electronic states and quantum Hall effect in GaSb-InAs-GaSb quantum wellsPhysical Review B, 1987
- Strain-generated electric fields in [111] growth axis strained-layer superlatticesSolid State Communications, 1986
- Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctionsJournal of Physics C: Solid State Physics, 1985
- Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAsPhysical Review Letters, 1978