Formation of low pressure chemically vapour deposited W thin film on silicon dioxide for gate electrode application
- 1 December 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 253 (1-2) , 377-381
- https://doi.org/10.1016/0040-6090(94)90351-4
Abstract
No abstract availableKeywords
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