On the separation of quasi-Fermi levels and the boundary conditions for junction devices
- 1 December 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (12) , 1223-1228
- https://doi.org/10.1016/0038-1101(80)90116-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Boundary conditions at p-n junctionsSolid-State Electronics, 1979
- Law of the junction for degenerate material with position-dependent band gap and electron affinitySolid-State Electronics, 1979
- On Fletcher's boundary conditionsSolid-State Electronics, 1979
- Inconsistencies in the original form of the fletcher boundary conditionsSolid-State Electronics, 1978
- Transition region behavior in abrupt, forward-biased pn-junctionsSolid-State Electronics, 1977
- Current-voltage relations and equivalent circuits of transistors at high injection levelsSolid-State Electronics, 1974
- Boundary conditions for the space-charge region of a P-N-junctionSolid-State Electronics, 1969
- Some remarks on “high injection theories of the p-n junction in the charge neutrality approximation”Solid-State Electronics, 1967
- Comments on “high injection theories of the p-n junction”Solid-State Electronics, 1967
- Hole-electron product of pn junctionsSolid-State Electronics, 1967