Ion-implanted GaAs X-band power f.e.t.s
- 30 August 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (18) , 576-578
- https://doi.org/10.1049/el:19790414
Abstract
Active layers for GaAs power f.e.t.s have been produced by Si implantation into Cr-doped substrates followed by a simple proximity-annealing technique. Devices fabricated on these layers have up to 1.05 W/mm gate width at 10 GHz. This performance is equal to that of epitaxial devices.Keywords
This publication has 2 references indexed in Scilit:
- Ion implanted GaAs power FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978
- Fully ion implanted GaAs power FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977