Band gaps of lattice-matched (Ga,In)(As,N) alloys
- 25 October 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (17) , 2578-2580
- https://doi.org/10.1063/1.125083
Abstract
The band gaps of the GaInAsN alloys lattice-matched to GaAs and InP have been calculated as a function of the nitrogen composition and as a function of pressure, by using a pseudopotential technique. The calculations are in excellent agreement with the experimental results, which are only available for small nitrogen compositions. The band gap of both lattice-matched systems is predicted to significantly decrease when further increasing the nitrogen content. As a result, the band gap of both systems closes for large enough nitrogen compositions (around 12%–20%).Keywords
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