Amorphisation and surface morphology development at low-energy ion milling
- 31 January 1998
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 70 (3) , 161-171
- https://doi.org/10.1016/s0304-3991(97)00120-4
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- The effects of ion species and target temperature on topography development on ion bombarded SiJournal of Applied Physics, 1995
- Study of ion mixing during Auger depth profiling of Ge–Si multilayer system. II. Low ion energy (0.2–2 keV) rangeJournal of Vacuum Science & Technology A, 1995
- Auger Depth Profile Analysis of Deeply Buried InterfacesPhysica Status Solidi (a), 1994
- Roughening instability and evolution of the Ge(001) surface during ion sputteringPhysical Review Letters, 1994
- Published by Elsevier ,1993
- Depth profile analysis of aluminium metallization in microelectronics: Optimization of depth resolutionSurface and Interface Analysis, 1992
- Submicron-scale surface roughening induced by ion bombardmentPhysical Review Letters, 1991
- Ion-induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotationJournal of Vacuum Science & Technology A, 1991
- Analysis of AlGaAs/GaAs superlattices by means of sputter‐assisted AES, SEM and TEMSurface and Interface Analysis, 1990
- Cone formation as a result of whisker growth on ion bombarded metal surfacesJournal of Vacuum Science & Technology A, 1985