Altering the thermal conductivity of phosphorus-doped Si-Ge alloys by the precipitation of dopant

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Abstract
The thermal conductivity and resistivity of heavily doped n-type Si63.5Ge36.5 and Si80Ge20 alloys have been determined at 300K as a function of period of isothermal heat treatment at 773K (precipitation of the dopant phosphorus from solid solution in the alloys being most rapid around this temperature). During the first 100 h of heat treatment a sharp decrease in the lattice thermal resistivity accompanied by a similar decrease in the carrier concentration was observed. Subsequently the lattice thermal resistivity and carrier concentration. The proportion of the heat current carried by the charge carriers, initially about 15%, decreases to a few per cent at the end of heat treatment.