Critical aspects of high energy implants for CMOS technology: Channeling effects and masking problems
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1-4) , 452-455
- https://doi.org/10.1016/0168-583x(87)90876-7
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Optimized retrograde N-well for 1-μm CMOS technologyIEEE Journal of Solid-State Circuits, 1986
- Applications of MeV ion beams to material processingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985