Valence-band offset in strained GaAs-InxGa1−xAs superlattices
- 9 September 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (11) , 1329-1331
- https://doi.org/10.1063/1.105490
Abstract
The valence (or conduction)-band offset for GaAs-InGaAs superlattices is determined by comparing the calculated energies with conduction intersubband energies obtained from electronic Raman scattering (ERS). A valence-band offset of 40% is estimated for samples with an In content of about 20%, whereas the offset is found to be 60% for samples with an In content of about 5%.Keywords
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