Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
- 1 October 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (14) , 2148-2150
- https://doi.org/10.1063/1.1405151
Abstract
The effect of thermal annealing on Si/SiGe heterostructures is studied using Raman spectroscopy. The structures consisted of Si on relaxed Si0.8Ge0.2 where the top Si thickness was 20–30 nm. Micro-Raman spectroscopy with 488 nm incident radiation revealed no significant shift in the strained Si peak position with thermal annealing at temperatures up to 1100 °C for 30 s. However, the intensity of the Si peak was systematically reduced with increasing thermal processing, a result which is attributed to interdiffusion at the Si/SiGe interface resulting in an apparent thinning of the Si cap layer.Keywords
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