Reduction in the effective barrier height in PtSi-p-Si Schottky diodes by using low energy ion implantation
- 1 July 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 93 (3-4) , 407-412
- https://doi.org/10.1016/0040-6090(82)90146-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Enhancement of effective barrier height in Ti-silicon Schottky diode using low-energy ion implantationIEEE Transactions on Electron Devices, 1980
- Ion-implanted low-barrier PtSi Schottky-barrier diodesIEEE Transactions on Electron Devices, 1980
- Control of Schottky barrier height using highly doped surface layersSolid-State Electronics, 1976
- Reducing the effective height of a Schottky barrier using low-energy ion implantationApplied Physics Letters, 1974
- Determination of Low Barrier Heights in Metal-Semiconductor ContactsJournal of Applied Physics, 1970