Luminescence study of a 300°C electron irradiated InP epilayer
- 30 June 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 54 (9) , 767-770
- https://doi.org/10.1016/0038-1098(85)90281-9
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Low-temperature photoluminescence properties of high-quality GaAs layers grown by molecular-beam epitaxyJournal of Applied Physics, 1985
- Optical properties of electron irradiation induced defects in InPSolid State Communications, 1984
- Defects in low temperature electron irradiated InPSolid State Communications, 1984
- Stress effects on excitons bound to neutral acceptors in InPPhysical Review B, 1984
- Electron irradiation defects in InPJournal of Crystal Growth, 1983
- Impact ionization of excitons and shallow donors in InPPhysical Review B, 1983
- Deep radiative levels in InPJournal of Applied Physics, 1982
- The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAsApplied Physics Letters, 1980
- Free and bound electron transitions to acceptors in indium phosphideSolid State Communications, 1972