Optical properties of electron irradiation induced defects in InP
- 31 August 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 51 (6) , 359-363
- https://doi.org/10.1016/0038-1098(84)90113-3
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Defects in low temperature electron irradiated InPSolid State Communications, 1984
- Electron irradiation defects in InPJournal of Crystal Growth, 1983
- Defects induced by electron irradiation in InPJournal of Applied Physics, 1983
- Electron irradiation effects in p-type GaAsJournal of Applied Physics, 1982
- Electron irradiation induced deep levels in p-InPApplied Physics Letters, 1982
- Deep levels introduced by electron irradiation of InPJournal of Physics C: Solid State Physics, 1982
- Radiation defects in electron-irradiated InP crystalsPhysica Status Solidi (a), 1982
- Defect states in electron bombarded n-InPApplied Physics Letters, 1982
- Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductorsApplied Physics A, 1977
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976