Electron irradiation induced deep levels in p-InP
- 15 November 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (10) , 956-958
- https://doi.org/10.1063/1.93354
Abstract
Room‐temperature 1‐MeV electron irradiations have been performed on p‐type epitaxial InP and the induced defects have been investigated by deep level transient spectroscopy in the range 90–300 K. Five hole traps created by the irradiations were detected, corresponding to a total introduction rate of ∼1 cm−1, much higher than what had been found in n‐InP. The dominant traps anneal out at 360–410 K.Keywords
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