Recombination-enhanced annealing of the E1 and E2 defect levels in 1-MeV-electron–irradiated n-GaAs

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Abstract
Recombination‐enhanced annealing of the E1 (Ec−0.08 eV) and E2 (Ec−0.18 eV) defect levels in n‐GaAs has been studied by deep‐level transient spectroscopy (DLTS). The defects are controllably introduced at room temperature by irradiation with 1‐MeV electrons. Thermal annealing at reverse and zero bias yields an activation energy of ΔE=1.75±0.17 eV and shows that charge‐state effects are not operative. Recombination annealing produces an enhancement of several orders of magnitude in the annealing rate and an activation energy of 0.98±0.10 eV. The annealing reaction obeys first‐order kinetics and does not saturate with injection currents up to 350 A/cm2. The relationship of this data to earlier observations of recombination‐enhanced annealing (motion) in GaAs and GaP is discussed as well as the possible implications for injection‐mode device degradation.