Nonradiative Recombination at Deep Levels in GaAs and GaP by Lattice-Relaxation Multiphonon Emission
- 1 December 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 35 (22) , 1525-1528
- https://doi.org/10.1103/physrevlett.35.1525
Abstract
Measurements of the temperature dependence of the carrier capture cross sections for ten deep levels in GaAs and GaP give strong evidence for nonradiative capture by lattice-relaxation multiphonon emission. A simple one-coordinate theory which takes into account the breakdown of the adiabatic approximation gives a good quantitative fit to the data.Keywords
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