Non‐Radiative Transitions in Semiconductors
- 1 January 1970
- journal article
- review article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 41 (2) , 457-489
- https://doi.org/10.1002/pssb.19700410202
Abstract
No abstract availableThis publication has 130 references indexed in Scilit:
- Possibility of Exciton Binding to Ionized Impurities in SemiconductorsPhysical Review B, 1969
- Possibility of Exciton Binding to Ionized Impurities in SemiconductorsPhysical Review B, 1969
- Decay Modes with Coherent Resonant-Energy Transfer between Deep Impurities in SolidsPhysical Review B, 1968
- Excitation Spectra and Quantum Efficiency of GaP Containing Zn and OPhysical Review B, 1968
- Effect of Compensation on Breakdown Fields in Homogeneous SemiconductorsPhysical Review B, 1967
- Resonant Energy Transfer between ExcitedCenters in KIPhysical Review B, 1966
- High-Energy Emission in GaAs Electroluminescent DiodesPhysical Review B, 1966
- Photoexcited Electron Capture by Ionized and Neutral Shallow Impurities in Silicon at Liquid-Helium TemperaturesPhysical Review B, 1966
- Remarks on the Recombination of Electrons and Donors in n‐Type GermaniumPhysica Status Solidi (b), 1966
- Bound Excitons in GaPPhysical Review B, 1963