Injection-stimulated dislocation motion in semiconductors
- 15 March 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (6) , 297-300
- https://doi.org/10.1063/1.88760
Abstract
Misfit dislocations introduced during LPE growth are shown to act as sinks for point defects introduced by 1‐MeV electron bombardment in Ga1−xAlxAs1−yPy/GaAs p+n heterojunctions. Electron‐beam‐stimulated dislocation motion was observed directly with in situ TEM studies on previously bombarded material. SEM measurements have correlated beam‐induced defect annealing with recombination‐enhanced defect motion. These results suggest that dislocation networks, which are active in the dark‐line‐defect degradation mode of heterostructure lasers, may form by a climb mechanism which is activated by the injection‐stimulated motion of point defects.Keywords
This publication has 7 references indexed in Scilit:
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974
- Observation of Recombination-Enhanced Defect Reactions in SemiconductorsPhysical Review Letters, 1974
- Nature of optically induced defects in Ga1−xAlxAs–GaAs double-heterojunction laser structuresApplied Physics Letters, 1974
- Monte Carlo simulation of the kinetics of heterogeneous nucleationJournal of Applied Physics, 1974
- DEGRADATION AND PASSIVATION OF GaP LIGHT-EMITTING DIODESApplied Physics Letters, 1971
- Physical basis of noncatastrophic degradation in GaAs injection lasersProceedings of the IEEE, 1969
- Degradation of GaAs injection devicesSolid-State Electronics, 1968