Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers
- 1 September 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (9) , 3899-3903
- https://doi.org/10.1063/1.1663883
Abstract
The rapid degradation phenomenon in Ga1−x Al x As–GaAs DH lasers has been associated with the growth of a dislocation network during the device operation. The nature of these defects has been analyzed by transmission electron microscopy in an effort to understand their origin and growth mechanism. The propagation of the dislocation network is found to take place by successive climb of a dislocation crossing the n‐Ga1−x Al x As, p‐GaAs, and p‐Ga1−x Al x As layers in the stripe area. The climb process leads to the formation of a three‐dimensional dislocation dipole network which extends through the three epitaxial layers and remains confined to the stripe area. A tentative model which discusses the network growth process is presented. The source of the very large vacancy concentration involved in the climb process has been attributed to the interfaces between the binary and ternary layers. The fast climb rate has been related to large drift forces acting on the vacancies during the device operation. The dominant drift forces are thought to be electrical and elastic in nature.This publication has 12 references indexed in Scilit:
- Nature of optically induced defects in Ga1−xAlxAs–GaAs double-heterojunction laser structuresApplied Physics Letters, 1974
- A closer look at laser damage in PMMAApplied Physics Letters, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- cw degradation at 300°K of GaAs double-heterostructure junction lasers. I. Emission spectraJournal of Applied Physics, 1973
- Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasersApplied Physics Letters, 1973
- Continuous operation of GaAs–Ga1 − xAlxAs double-heterostructure lasers with 30 °C half-lives exceeding 1000 hApplied Physics Letters, 1973
- GaAs–AlxGa1−xAs Double Heterostructure Injection LasersJournal of Applied Physics, 1971
- Photoluminescence of Cu-Doped Gallium ArsenideJournal of Applied Physics, 1966
- On the Determination of the Nature of Dislocation LoopsPhilosophical Magazine, 1964
- Ratio of Interstitial to Substitutional Zinc in GaAs and its Relation to Zinc DiffusionJournal of Applied Physics, 1963