Optical Mapping of the Total EL2-Concentration in Semi-Insulating GaAs-Wafers
- 1 June 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (6R)
- https://doi.org/10.1143/jjap.28.957
Abstract
In semi-insulating GaAs wafers the distribution of the total EL2, independent of its charge state, was determined by purely optical absorption measurements. In all (Czochralski-grown) wafers studied the radial distribution of the total EL2 is W-shaped and shows fourfold symmetry. So the fluctuations of the neutral EL2-concentration seen in the usual near infrared transmission mapping reflect essentially the inhomogeneity of the total EL2 distribution. The mean EL2+ concentration in all wafers was close to typical C- and Zn-concentrations in s.i. GaAs (≈ 2·1015 cm-3).Keywords
This publication has 11 references indexed in Scilit:
- On the Electron Photoionization Cross-Section of EL2 in GaAsJapanese Journal of Applied Physics, 1989
- Undoped Semi-Insulating GaAs of Very Low Residual Acceptor ConcentrationJapanese Journal of Applied Physics, 1988
- Hole photoionization cross sections of EL2 in GaAsApplied Physics Letters, 1988
- New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAsApplied Physics Letters, 1986
- Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAsApplied Physics Letters, 1986
- Experimental requirements for quantitative mapping of midgap flaw concentration in semi-insulating GaAs wafers by measurement of near-infrared transmittanceJournal of Applied Physics, 1985
- Photoluminescence and infrared spectroscopy of acceptors in GaAsJournal of Applied Physics, 1984
- EL2 distributions in doped and undoped liquid encapsulated Czochralski GaAsApplied Physics Letters, 1983
- Optical assessment of the main electron trap in bulk semi-insulating GaAsApplied Physics Letters, 1981
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981